Resumen
Resistive switching devices - memristors - present a tunable, incremental switching behavior. Tuning their state accurately, repeatedly and in a wide range, makes memristors well-suited for multi-level (ML) resistive memory cells and analog computing applications. In this brief, the tuning approach based on a memristor-resistor voltage divider (VD) is validated experimentally using commercial memristors from Knowm Inc. and a custom circuit. Rapid and controllable multi-state SET tuning is shown with an appreciable range of different resistance values obtained as a function of the amplitude of the applied voltage pulse. The efficiency of the VD is finally compared against an adaptive pulse-based tuning protocol, in terms of circuit overhead, tuning precision, tuning time, and energy consumption, qualifying as a simple hardware solution for fast, reliable, and energy-efficient ML resistance tuning.
| Idioma original | Inglés |
|---|---|
| Número de artículo | 8740908 |
| Páginas (desde-hasta) | 620-624 |
| Número de páginas | 5 |
| Publicación | IEEE Transactions on Circuits and Systems II: Express Briefs |
| Volumen | 67 |
| N.º | 4 |
| DOI | |
| Estado | Publicada - abr. 2020 |
| Publicado de forma externa | Sí |
Nota bibliográfica
Publisher Copyright:© 2004-2012 IEEE.
ODS de las Naciones Unidas
Este resultado contribuye a los siguientes Objetivos de Desarrollo Sostenible
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ODS 7: Energía asequible y no contaminante
Huella
Profundice en los temas de investigación de 'Voltage Divider for Self-Limited Analog State Programing of Memristors'. En conjunto forman una huella única.Citar esto
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