Steep Slope Ferroelectric Field Effect Transistor

Jorge Gomez; Sourav Dutta; Kai Ni; Siddharth Joshi; Suman Datta

doi:10.1109/EDTM.2019.8731115

Steep Slope Ferroelectric Field Effect Transistor

Jorge Gomez
, Sourav Dutta
, Kai Ni
, Siddharth Joshi
, Suman Datta

Producción científica: Capítulo del libro/informe/acta de congreso › Contribución a la conferencia › revisión exhaustiva

5 Citas (Scopus)

Resumen

In this work, we present an analysis of the switching dynamics of ferroelectrics that provides a critical insight into the steep slope exhibited by Ferroelectric Field Effect Transistor (FeFET). We show that, steep slope is fundamentally related to two competing mechanisms-the polarization switching dynamics in the ferroelectric and the time delay of the compensating free-charge. Our analysis sheds light on a possible mechanism of the phenomenon of transient negative capacitance (NC) without the requirement of Landau-Khalatnikov (L-K) theory.

Idioma original	Inglés
Título de la publicación alojada	2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019
Editorial	Institute of Electrical and Electronics Engineers Inc.
Páginas	59-61
Número de páginas	3
ISBN (versión digital)	9781538665084
DOI	https://doi.org/10.1109/EDTM.2019.8731115
Estado	Publicada - mar. 2019
Publicado de forma externa	Sí
Evento	2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019 - Singapore, Singapur Duración: 12 mar. 2019 → 15 mar. 2019

Serie de la publicación

Nombre	2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019

Conferencia o congreso

Conferencia o congreso	2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019
País/Territorio	Singapur
Ciudad	Singapore
Período	12/03/19 → 15/03/19

Nota bibliográfica

Publisher Copyright:
© 2019 IEEE.

Acceder al documento

10.1109/EDTM.2019.8731115

Otros archivos y enlaces

Enlace a la publicación en Scopus

Citar esto

Gomez, J., Dutta, S., Ni, K., Joshi, S., & Datta, S. (2019). Steep Slope Ferroelectric Field Effect Transistor. En 2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019 (pp. 59-61). Artículo 8731115 (2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/EDTM.2019.8731115

@inproceedings{34fee239bc5c44fb916986c614db9ef1,

title = "Steep Slope Ferroelectric Field Effect Transistor",

abstract = "In this work, we present an analysis of the switching dynamics of ferroelectrics that provides a critical insight into the steep slope exhibited by Ferroelectric Field Effect Transistor (FeFET). We show that, steep slope is fundamentally related to two competing mechanisms-the polarization switching dynamics in the ferroelectric and the time delay of the compensating free-charge. Our analysis sheds light on a possible mechanism of the phenomenon of transient negative capacitance (NC) without the requirement of Landau-Khalatnikov (L-K) theory.",

keywords = "FeFET and NC-FET, Steep Slope",

author = "Jorge Gomez and Sourav Dutta and Kai Ni and Siddharth Joshi and Suman Datta",

note = "Publisher Copyright: {\textcopyright} 2019 IEEE.; 2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019 ; Conference date: 12-03-2019 Through 15-03-2019",

year = "2019",

month = mar,

doi = "10.1109/EDTM.2019.8731115",

language = "English",

series = "2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "59--61",

booktitle = "2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019",

address = "United States",

}

Gomez, J, Dutta, S, Ni, K, Joshi, S & Datta, S 2019, Steep Slope Ferroelectric Field Effect Transistor. En 2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019., 8731115, 2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019, Institute of Electrical and Electronics Engineers Inc., pp. 59-61, 2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019, Singapore, Singapur, 12/03/19. https://doi.org/10.1109/EDTM.2019.8731115

Steep Slope Ferroelectric Field Effect Transistor. / Gomez, Jorge; Dutta, Sourav; Ni, Kai et al.
2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019. Institute of Electrical and Electronics Engineers Inc., 2019. p. 59-61 8731115 (2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019).

Producción científica: Capítulo del libro/informe/acta de congreso › Contribución a la conferencia › revisión exhaustiva

TY - GEN

T1 - Steep Slope Ferroelectric Field Effect Transistor

AU - Gomez, Jorge

AU - Dutta, Sourav

AU - Ni, Kai

AU - Joshi, Siddharth

AU - Datta, Suman

PY - 2019/3

Y1 - 2019/3

N2 - In this work, we present an analysis of the switching dynamics of ferroelectrics that provides a critical insight into the steep slope exhibited by Ferroelectric Field Effect Transistor (FeFET). We show that, steep slope is fundamentally related to two competing mechanisms-the polarization switching dynamics in the ferroelectric and the time delay of the compensating free-charge. Our analysis sheds light on a possible mechanism of the phenomenon of transient negative capacitance (NC) without the requirement of Landau-Khalatnikov (L-K) theory.

AB - In this work, we present an analysis of the switching dynamics of ferroelectrics that provides a critical insight into the steep slope exhibited by Ferroelectric Field Effect Transistor (FeFET). We show that, steep slope is fundamentally related to two competing mechanisms-the polarization switching dynamics in the ferroelectric and the time delay of the compensating free-charge. Our analysis sheds light on a possible mechanism of the phenomenon of transient negative capacitance (NC) without the requirement of Landau-Khalatnikov (L-K) theory.

KW - FeFET and NC-FET

KW - Steep Slope

UR - https://www.scopus.com/pages/publications/85067817743

U2 - 10.1109/EDTM.2019.8731115

DO - 10.1109/EDTM.2019.8731115

M3 - Conference contribution

AN - SCOPUS:85067817743

T3 - 2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019

SP - 59

EP - 61

BT - 2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019

Y2 - 12 March 2019 through 15 March 2019

ER -

Steep Slope Ferroelectric Field Effect Transistor

Resumen

Serie de la publicación

Conferencia o congreso

Nota bibliográfica

Acceder al documento

Otros archivos y enlaces

Huella

Citar esto