Steep Slope Ferroelectric Field Effect Transistor

Jorge Gomez, Sourav Dutta, Kai Ni, Siddharth Joshi, Suman Datta

Producción científica: Capítulo del libro/informe/acta de congresoContribución a la conferenciarevisión exhaustiva

4 Citas (Scopus)

Resumen

In this work, we present an analysis of the switching dynamics of ferroelectrics that provides a critical insight into the steep slope exhibited by Ferroelectric Field Effect Transistor (FeFET). We show that, steep slope is fundamentally related to two competing mechanisms-the polarization switching dynamics in the ferroelectric and the time delay of the compensating free-charge. Our analysis sheds light on a possible mechanism of the phenomenon of transient negative capacitance (NC) without the requirement of Landau-Khalatnikov (L-K) theory.

Idioma originalInglés
Título de la publicación alojada2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019
EditorialInstitute of Electrical and Electronics Engineers Inc.
Páginas59-61
Número de páginas3
ISBN (versión digital)9781538665084
DOI
EstadoPublicada - mar. 2019
Publicado de forma externa
Evento2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019 - Singapore, Singapur
Duración: 12 mar. 201915 mar. 2019

Serie de la publicación

Nombre2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019

Conferencia

Conferencia2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019
País/TerritorioSingapur
CiudadSingapore
Período12/03/1915/03/19

Nota bibliográfica

Publisher Copyright:
© 2019 IEEE.

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