Silicon Quantum Dot in a Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET) Structure

Maroun Khoury; Allen Gunther; David P., Jr. Pivin; Mary Rack; David Ferry

doi:10.1143/JJAP.38.469

Silicon Quantum Dot in a Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET) Structure

Maroun Khoury, Allen Gunther, David P., Jr. Pivin, Mary Rack, David Ferry

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Resumen

We have fabricated a 200 nm quantum dot in a silicon Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET) structure. Confining gates situated on top of a 10 nm oxide deplete the electron gas created by an inversion gate 70 nm away from the Si-SiO2 interface. Measurements indicate that the size of the dot can be tuned by the gates. Furthermore, we observe conductance fluctuations in the gate characteristic which are indicative of single-electron behavior.

Idioma original	Inglés
Páginas (desde-hasta)	469
Publicación	Japanese Journal of Applied Physics
Volumen	38
N.º	1B
DOI	https://doi.org/10.1143/JJAP.38.469
Estado	Publicada - 1999

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title = "Silicon Quantum Dot in a Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET) Structure",

abstract = "We have fabricated a 200 nm quantum dot in a silicon Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET) structure. Confining gates situated on top of a 10 nm oxide deplete the electron gas created by an inversion gate 70 nm away from the Si-SiO2 interface. Measurements indicate that the size of the dot can be tuned by the gates. Furthermore, we observe conductance fluctuations in the gate characteristic which are indicative of single-electron behavior.",

author = "Maroun Khoury and Allen Gunther and Pivin, {David P., Jr.} and Mary Rack and David Ferry",

year = "1999",

doi = "10.1143/JJAP.38.469",

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journal = "Japanese Journal of Applied Physics",

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T1 - Silicon Quantum Dot in a Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET) Structure

AU - Khoury, Maroun

AU - Gunther, Allen

AU - Pivin, David P., Jr.

AU - Rack, Mary

AU - Ferry, David

PY - 1999

Y1 - 1999

N2 - We have fabricated a 200 nm quantum dot in a silicon Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET) structure. Confining gates situated on top of a 10 nm oxide deplete the electron gas created by an inversion gate 70 nm away from the Si-SiO2 interface. Measurements indicate that the size of the dot can be tuned by the gates. Furthermore, we observe conductance fluctuations in the gate characteristic which are indicative of single-electron behavior.

AB - We have fabricated a 200 nm quantum dot in a silicon Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET) structure. Confining gates situated on top of a 10 nm oxide deplete the electron gas created by an inversion gate 70 nm away from the Si-SiO2 interface. Measurements indicate that the size of the dot can be tuned by the gates. Furthermore, we observe conductance fluctuations in the gate characteristic which are indicative of single-electron behavior.

U2 - 10.1143/JJAP.38.469

DO - 10.1143/JJAP.38.469

M3 - Article

SN - 0021-4922

VL - 38

SP - 469

JO - Japanese Journal of Applied Physics

JF - Japanese Journal of Applied Physics

IS - 1B

ER -

Silicon Quantum Dot in a Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET) Structure

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