Nanoscale Lithography with Electron Exposure of SiO 2 Resists

Thomas Whidden, John Allgair, Angela Jenkins-Gray, Maroun Khoury, Michael Kozicki, David Ferry

Producción científica: Contribución a una revistaArtículorevisión exhaustiva

5 Citas (Scopus)


We report on electron-beam patterned hydrocarbon residues on silicon dioxide as chemical initiators in high temperature HF vapor etching for the production of nanolithographic masks (∼20 nm feature size). These are of utility in reactive ion etching based pattern transfer to the underlying substrate and, potentially, as dielectric components in nanoscale devices. Metallic cobalt, deposited through the oxide mask, has been used to generate 12 20 nm wide lines of cobalt silicide.
Idioma originalInglés
Páginas (desde-hasta)4420
PublicaciónJapanese Journal of Applied Physics
EstadoPublicada - 1 ago. 1995


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