Exploring the voltage divider approach for accurate memristor state tuning

Ioannis Vourkas; Jorge Gómez; Ángel Abusleme; Nikolaos Vasileiadis; Georgios Ch Sirakoulis; Antonio Rubio

doi:10.1109/LASCAS.2017.7948043

Exploring the voltage divider approach for accurate memristor state tuning

Ioannis Vourkas
, Jorge Gómez
, Ángel Abusleme
, Nikolaos Vasileiadis
, Georgios Ch Sirakoulis
, Antonio Rubio

Producción científica: Capítulo del libro/informe/acta de congreso › Contribución a la conferencia › revisión exhaustiva

11 Citas (Scopus)

Resumen

The maximum exploitation of the favorable properties and the analog nature of memristor technology in future nonvolatile resistive memories, requires accurate multi-level programming. In this direction, we explore the voltage divider (VD) approach for highly controllable multi-state SET memristor tuning. We present the theoretical basis of operation, the main advantages and weaknesses. We finally propose an improved closed-loop VD SET scheme to tackle the variability effect and achieve <1% tuning precision, on average 3× faster than another accurate tuning algorithm of the recent literature.

Idioma original	Inglés
Título de la publicación alojada	LASCAS 2017 - 8th IEEE Latin American Symposium on Circuits and Systems, R9 IEEE CASS Flagship Conference
Subtítulo de la publicación alojada	Proceedings
Editorial	Institute of Electrical and Electronics Engineers Inc.
ISBN (versión digital)	9781509058594
DOI	https://doi.org/10.1109/LASCAS.2017.7948043
Estado	Publicada - 13 jun. 2017
Publicado de forma externa	Sí
Evento	8th IEEE Latin American Symposium on Circuits and Systems, LASCAS 2017 - Bariloche, Argentina Duración: 20 feb. 2017 → 23 feb. 2017

Serie de la publicación

Nombre	LASCAS 2017 - 8th IEEE Latin American Symposium on Circuits and Systems, R9 IEEE CASS Flagship Conference: Proceedings

Conferencia o congreso

Conferencia o congreso	8th IEEE Latin American Symposium on Circuits and Systems, LASCAS 2017
País/Territorio	Argentina
Ciudad	Bariloche
Período	20/02/17 → 23/02/17

Nota bibliográfica

Publisher Copyright:
© 2017 IEEE.

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10.1109/LASCAS.2017.7948043

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Vourkas, I., Gómez, J., Abusleme, Á., Vasileiadis, N., Sirakoulis, G. C., & Rubio, A. (2017). Exploring the voltage divider approach for accurate memristor state tuning. En LASCAS 2017 - 8th IEEE Latin American Symposium on Circuits and Systems, R9 IEEE CASS Flagship Conference: Proceedings Artículo 7948043 (LASCAS 2017 - 8th IEEE Latin American Symposium on Circuits and Systems, R9 IEEE CASS Flagship Conference: Proceedings). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/LASCAS.2017.7948043

Vourkas, Ioannis ; Gómez, Jorge ; Abusleme, Ángel et al. / Exploring the voltage divider approach for accurate memristor state tuning. LASCAS 2017 - 8th IEEE Latin American Symposium on Circuits and Systems, R9 IEEE CASS Flagship Conference: Proceedings. Institute of Electrical and Electronics Engineers Inc., 2017. (LASCAS 2017 - 8th IEEE Latin American Symposium on Circuits and Systems, R9 IEEE CASS Flagship Conference: Proceedings).

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title = "Exploring the voltage divider approach for accurate memristor state tuning",

abstract = "The maximum exploitation of the favorable properties and the analog nature of memristor technology in future nonvolatile resistive memories, requires accurate multi-level programming. In this direction, we explore the voltage divider (VD) approach for highly controllable multi-state SET memristor tuning. We present the theoretical basis of operation, the main advantages and weaknesses. We finally propose an improved closed-loop VD SET scheme to tackle the variability effect and achieve <1\% tuning precision, on average 3× faster than another accurate tuning algorithm of the recent literature.",

keywords = "memristor, multi-level storage, resistive RAM, resistive switching, tuning, voltage divider",

author = "Ioannis Vourkas and Jorge G{\'o}mez and {\'A}ngel Abusleme and Nikolaos Vasileiadis and Sirakoulis, \{Georgios Ch\} and Antonio Rubio",

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Vourkas, I, Gómez, J, Abusleme, Á, Vasileiadis, N, Sirakoulis, GC & Rubio, A 2017, Exploring the voltage divider approach for accurate memristor state tuning. En LASCAS 2017 - 8th IEEE Latin American Symposium on Circuits and Systems, R9 IEEE CASS Flagship Conference: Proceedings., 7948043, LASCAS 2017 - 8th IEEE Latin American Symposium on Circuits and Systems, R9 IEEE CASS Flagship Conference: Proceedings, Institute of Electrical and Electronics Engineers Inc., 8th IEEE Latin American Symposium on Circuits and Systems, LASCAS 2017, Bariloche, Argentina, 20/02/17. https://doi.org/10.1109/LASCAS.2017.7948043

Exploring the voltage divider approach for accurate memristor state tuning. / Vourkas, Ioannis; Gómez, Jorge; Abusleme, Ángel et al.
LASCAS 2017 - 8th IEEE Latin American Symposium on Circuits and Systems, R9 IEEE CASS Flagship Conference: Proceedings. Institute of Electrical and Electronics Engineers Inc., 2017. 7948043 (LASCAS 2017 - 8th IEEE Latin American Symposium on Circuits and Systems, R9 IEEE CASS Flagship Conference: Proceedings).

Producción científica: Capítulo del libro/informe/acta de congreso › Contribución a la conferencia › revisión exhaustiva

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AU - Vourkas, Ioannis

AU - Gómez, Jorge

AU - Abusleme, Ángel

AU - Vasileiadis, Nikolaos

AU - Sirakoulis, Georgios Ch

AU - Rubio, Antonio

PY - 2017/6/13

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N2 - The maximum exploitation of the favorable properties and the analog nature of memristor technology in future nonvolatile resistive memories, requires accurate multi-level programming. In this direction, we explore the voltage divider (VD) approach for highly controllable multi-state SET memristor tuning. We present the theoretical basis of operation, the main advantages and weaknesses. We finally propose an improved closed-loop VD SET scheme to tackle the variability effect and achieve <1% tuning precision, on average 3× faster than another accurate tuning algorithm of the recent literature.

AB - The maximum exploitation of the favorable properties and the analog nature of memristor technology in future nonvolatile resistive memories, requires accurate multi-level programming. In this direction, we explore the voltage divider (VD) approach for highly controllable multi-state SET memristor tuning. We present the theoretical basis of operation, the main advantages and weaknesses. We finally propose an improved closed-loop VD SET scheme to tackle the variability effect and achieve <1% tuning precision, on average 3× faster than another accurate tuning algorithm of the recent literature.

KW - memristor

KW - multi-level storage

KW - resistive RAM

KW - resistive switching

KW - tuning

KW - voltage divider

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PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 8th IEEE Latin American Symposium on Circuits and Systems, LASCAS 2017

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Vourkas I, Gómez J, Abusleme Á, Vasileiadis N, Sirakoulis GC, Rubio A. Exploring the voltage divider approach for accurate memristor state tuning. En LASCAS 2017 - 8th IEEE Latin American Symposium on Circuits and Systems, R9 IEEE CASS Flagship Conference: Proceedings. Institute of Electrical and Electronics Engineers Inc. 2017. 7948043. (LASCAS 2017 - 8th IEEE Latin American Symposium on Circuits and Systems, R9 IEEE CASS Flagship Conference: Proceedings). doi: 10.1109/LASCAS.2017.7948043

Exploring the voltage divider approach for accurate memristor state tuning

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