Resumen
We report the first experimental demonstration of ferroelectric field-effect transistor (FEFET) based spiking neurons. A unique feature of the ferroelectric (FE) neuron demonstrated herein is the availability of both excitatory and inhibitory input connections in the compact 1T-1FEFET structure, which is also reported for the first time for any neuron implementations. Such dual neuron functionality is a key requirement for bio-mimetic neural networks and represents a breakthrough for implementation of the third generation spiking neural networks (SNNs) - also reported herein for unsupervised learning and clustering on real world data for the first time. The key to our demonstration is the careful design of two important device level features: (1) abrupt hysteretic transitions of the FEFET with no stable states therein, and (2) the dynamic tunability of the FEFET hysteresis by bias conditions which allows for the inhibition functionality. Experimentally calibrated, multi-domain Preisach based FEFET models were used to accurately simulate the FE neurons and project their performance at scaled nodes. We also implement an SNN for unsupervised clustering and benchmark the network performance across analog CMOS and emerging technologies and observe (1) unification of excitatory and inhibitory neural connections, (2) STDP based learning, (3) lowest reported power (3.6nW) during classification, and (4) a classification accuracy of 93%.
Idioma original | Inglés |
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Título de la publicación alojada | 2018 IEEE International Electron Devices Meeting, IEDM 2018 |
Editorial | Institute of Electrical and Electronics Engineers Inc. |
Páginas | 13.3.1-13.3.4 |
ISBN (versión digital) | 9781728119878 |
DOI | |
Estado | Publicada - 2 jul. 2018 |
Publicado de forma externa | Sí |
Evento | 64th Annual IEEE International Electron Devices Meeting, IEDM 2018 - San Francisco, Estados Unidos Duración: 1 dic. 2018 → 5 dic. 2018 |
Serie de la publicación
Nombre | Technical Digest - International Electron Devices Meeting, IEDM |
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Volumen | 2018-December |
ISSN (versión impresa) | 0163-1918 |
Conferencia
Conferencia | 64th Annual IEEE International Electron Devices Meeting, IEDM 2018 |
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País/Territorio | Estados Unidos |
Ciudad | San Francisco |
Período | 1/12/18 → 5/12/18 |
Nota bibliográfica
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