Cryogenic RF CMOS on 22nm FDSOI Platform with Record f_T=495GHz and f_MAX=497GHz

Keyphrases

• Fmax 100%
• NMOS 100%
• Cryo 100%
• 22nm FDSOI 100%
• PMOS 100%
• RF CMOS 100%
• High-frequency Operation 50%
• Order of Magnitude 50%
• Mixed-signal 50%
• Small-signal Model 50%
• Superconducting Logic 50%
• Gigas 50%
• T-dependent 50%
• Voltage Gap 50%
• High Bandwidth Memory 50%
• Maximum Oscillation Frequency 50%
• Gain-bandwidth Product 50%
• Three-order 50%
• FDSOI 50%
• Operating Temperature 50%
• Current Gain Cutoff Frequency 50%
• T-invariants 50%
• Gate Length 50%
• Interface Circuit 50%
• Terahertz 50%
• Invariant Component 50%
• Ultra High Gain 50%

Engineering

• Cutoff Frequency 100%
• Field Effect Transistor 100%
• Terahertz 100%
• Gap Voltage 100%
• Current Gain 100%
• Interface Circuit 100%
• Operating Temperature 100%
• Equivalent Circuit Model 100%
• Frequency Operation 100%
• Gain-Bandwidth Product 100%
• Gate Length 100%

Material Science

• Electronic Circuit 100%
• Density 50%
• Field Effect Transistor 50%