TY - JOUR
T1 - Characterization and Modeling of 22 nm FDSOI Cryogenic RF CMOS
AU - Chakraborty, Wriddhi
AU - Aabrar, Khandker Akif
AU - Gomez, Jorge
AU - Saligram, Rakshith
AU - Raychowdhury, Arijit
AU - Fay, Patrick
AU - Datta, Suman
N1 - Publisher Copyright:
© 2014 IEEE.
PY - 2021/12/1
Y1 - 2021/12/1
N2 - Analog and RF mixed-signal cryogenic-CMOS circuits with ultrahigh gain-bandwidth product can address a range of applications such as interface circuits between superconducting (SC) single-flux quantum (SFQ) logic and cryo-dynamic random-access memory (DRAM), circuits for sensing and controlling qubits faster than their decoherence time for at-scale quantum processor. In this work, we evaluate RF performance of 18 nm gate length (LG) fully depleted silicon-on-insulator (FDSOI) NMOS and PMOS from 300 to 5.5 K operating temperature. We experimentally demonstrate extrapolated peak unity current-gain cutoff frequency (fT) of 495/337 GHz (1.35 ×/1.25 × gain over 300 K) and peak maximum oscillation frequency (fMAX) of 497/372 GHz (1.3 × gain) for NMOS/PMOS, respectively, at 5.5 K. A small-signal equivalent model is developed to enable design-space exploration of RF circuits at cryogenic temperature and identify the temperature-dependent and temperature-invariant components of the extrinsic and the intrinsic FET. Finally, performance benchmarking reveals that 22 nm FDSOI cryogenic RF CMOS provides a viable option for achieving superior analog performance with giga-scale transistor integration density.
AB - Analog and RF mixed-signal cryogenic-CMOS circuits with ultrahigh gain-bandwidth product can address a range of applications such as interface circuits between superconducting (SC) single-flux quantum (SFQ) logic and cryo-dynamic random-access memory (DRAM), circuits for sensing and controlling qubits faster than their decoherence time for at-scale quantum processor. In this work, we evaluate RF performance of 18 nm gate length (LG) fully depleted silicon-on-insulator (FDSOI) NMOS and PMOS from 300 to 5.5 K operating temperature. We experimentally demonstrate extrapolated peak unity current-gain cutoff frequency (fT) of 495/337 GHz (1.35 ×/1.25 × gain over 300 K) and peak maximum oscillation frequency (fMAX) of 497/372 GHz (1.3 × gain) for NMOS/PMOS, respectively, at 5.5 K. A small-signal equivalent model is developed to enable design-space exploration of RF circuits at cryogenic temperature and identify the temperature-dependent and temperature-invariant components of the extrinsic and the intrinsic FET. Finally, performance benchmarking reveals that 22 nm FDSOI cryogenic RF CMOS provides a viable option for achieving superior analog performance with giga-scale transistor integration density.
KW - 22 nm fully depleted silicon-on-insulator (FDSOI) technology
KW - cryogenic-CMOS
KW - cut-off frequency (f)
KW - maximum oscillation frequency (f)
KW - quantum processor
KW - small-signal-equivalent circuit model
UR - http://www.scopus.com/inward/record.url?scp=85120577792&partnerID=8YFLogxK
U2 - 10.1109/JXCDC.2021.3131144
DO - 10.1109/JXCDC.2021.3131144
M3 - Article
AN - SCOPUS:85120577792
SN - 2329-9231
VL - 7
SP - 184
EP - 192
JO - IEEE Journal on Exploratory Solid-State Computational Devices and Circuits
JF - IEEE Journal on Exploratory Solid-State Computational Devices and Circuits
IS - 2
ER -