Abstract
Resistive switching devices - memristors - present a tunable, incremental switching behavior. Tuning their state accurately, repeatedly and in a wide range, makes memristors well-suited for multi-level (ML) resistive memory cells and analog computing applications. In this brief, the tuning approach based on a memristor-resistor voltage divider (VD) is validated experimentally using commercial memristors from Knowm Inc. and a custom circuit. Rapid and controllable multi-state SET tuning is shown with an appreciable range of different resistance values obtained as a function of the amplitude of the applied voltage pulse. The efficiency of the VD is finally compared against an adaptive pulse-based tuning protocol, in terms of circuit overhead, tuning precision, tuning time, and energy consumption, qualifying as a simple hardware solution for fast, reliable, and energy-efficient ML resistance tuning.
Original language | English |
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Article number | 8740908 |
Pages (from-to) | 620-624 |
Number of pages | 5 |
Journal | IEEE Transactions on Circuits and Systems II: Express Briefs |
Volume | 67 |
Issue number | 4 |
DOIs | |
State | Published - Apr 2020 |
Externally published | Yes |
Bibliographical note
Publisher Copyright:© 2004-2012 IEEE.
Keywords
- Digilent AD2
- Knowm
- Memristor
- multi-level memory
- ReRAM
- resistive switching
- voltage divider