Voltage Divider for Self-Limited Analog State Programing of Memristors

Jorge Gomez, Ioannis Vourkas*, Angel Abusleme, Georgios Ch Sirakoulis, Antonio Rubio

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

15 Scopus citations

Abstract

Resistive switching devices - memristors - present a tunable, incremental switching behavior. Tuning their state accurately, repeatedly and in a wide range, makes memristors well-suited for multi-level (ML) resistive memory cells and analog computing applications. In this brief, the tuning approach based on a memristor-resistor voltage divider (VD) is validated experimentally using commercial memristors from Knowm Inc. and a custom circuit. Rapid and controllable multi-state SET tuning is shown with an appreciable range of different resistance values obtained as a function of the amplitude of the applied voltage pulse. The efficiency of the VD is finally compared against an adaptive pulse-based tuning protocol, in terms of circuit overhead, tuning precision, tuning time, and energy consumption, qualifying as a simple hardware solution for fast, reliable, and energy-efficient ML resistance tuning.

Original languageEnglish
Article number8740908
Pages (from-to)620-624
Number of pages5
JournalIEEE Transactions on Circuits and Systems II: Express Briefs
Volume67
Issue number4
DOIs
StatePublished - Apr 2020
Externally publishedYes

Bibliographical note

Publisher Copyright:
© 2004-2012 IEEE.

Keywords

  • Digilent AD2
  • Knowm
  • Memristor
  • multi-level memory
  • ReRAM
  • resistive switching
  • voltage divider

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