Steep Slope Ferroelectric Field Effect Transistor

Jorge Gomez; Sourav Dutta; Kai Ni; Siddharth Joshi; Suman Datta

doi:10.1109/EDTM.2019.8731115

Steep Slope Ferroelectric Field Effect Transistor

Jorge Gomez, Sourav Dutta, Kai Ni, Siddharth Joshi, Suman Datta

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

5 Scopus citations

Abstract

In this work, we present an analysis of the switching dynamics of ferroelectrics that provides a critical insight into the steep slope exhibited by Ferroelectric Field Effect Transistor (FeFET). We show that, steep slope is fundamentally related to two competing mechanisms-the polarization switching dynamics in the ferroelectric and the time delay of the compensating free-charge. Our analysis sheds light on a possible mechanism of the phenomenon of transient negative capacitance (NC) without the requirement of Landau-Khalatnikov (L-K) theory.

Original language	English
Title of host publication	2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	59-61
Number of pages	3
ISBN (Electronic)	9781538665084
DOIs	https://doi.org/10.1109/EDTM.2019.8731115
State	Published - Mar 2019
Externally published	Yes
Event	2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019 - Singapore, Singapore Duration: 12 Mar 2019 → 15 Mar 2019

Publication series

Name	2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019

Conference

Conference	2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019
Country/Territory	Singapore
City	Singapore
Period	12/03/19 → 15/03/19

Bibliographical note

Publisher Copyright:
© 2019 IEEE.

Keywords

FeFET and NC-FET
Steep Slope

Access to Document

10.1109/EDTM.2019.8731115

Cite this

Gomez, J., Dutta, S., Ni, K., Joshi, S., & Datta, S. (2019). Steep Slope Ferroelectric Field Effect Transistor. In 2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019 (pp. 59-61). Article 8731115 (2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/EDTM.2019.8731115

@inproceedings{34fee239bc5c44fb916986c614db9ef1,

title = "Steep Slope Ferroelectric Field Effect Transistor",

abstract = "In this work, we present an analysis of the switching dynamics of ferroelectrics that provides a critical insight into the steep slope exhibited by Ferroelectric Field Effect Transistor (FeFET). We show that, steep slope is fundamentally related to two competing mechanisms-the polarization switching dynamics in the ferroelectric and the time delay of the compensating free-charge. Our analysis sheds light on a possible mechanism of the phenomenon of transient negative capacitance (NC) without the requirement of Landau-Khalatnikov (L-K) theory.",

keywords = "FeFET and NC-FET, Steep Slope",

author = "Jorge Gomez and Sourav Dutta and Kai Ni and Siddharth Joshi and Suman Datta",

note = "Publisher Copyright: {\textcopyright} 2019 IEEE.; 2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019 ; Conference date: 12-03-2019 Through 15-03-2019",

year = "2019",

month = mar,

doi = "10.1109/EDTM.2019.8731115",

language = "English",

series = "2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "59--61",

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address = "United States",

}

Gomez, J, Dutta, S, Ni, K, Joshi, S & Datta, S 2019, Steep Slope Ferroelectric Field Effect Transistor. in 2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019., 8731115, 2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019, Institute of Electrical and Electronics Engineers Inc., pp. 59-61, 2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019, Singapore, Singapore, 12/03/19. https://doi.org/10.1109/EDTM.2019.8731115

Steep Slope Ferroelectric Field Effect Transistor. / Gomez, Jorge; Dutta, Sourav; Ni, Kai et al.
2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019. Institute of Electrical and Electronics Engineers Inc., 2019. p. 59-61 8731115 (2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Steep Slope Ferroelectric Field Effect Transistor

AU - Gomez, Jorge

AU - Dutta, Sourav

AU - Ni, Kai

AU - Joshi, Siddharth

AU - Datta, Suman

PY - 2019/3

Y1 - 2019/3

N2 - In this work, we present an analysis of the switching dynamics of ferroelectrics that provides a critical insight into the steep slope exhibited by Ferroelectric Field Effect Transistor (FeFET). We show that, steep slope is fundamentally related to two competing mechanisms-the polarization switching dynamics in the ferroelectric and the time delay of the compensating free-charge. Our analysis sheds light on a possible mechanism of the phenomenon of transient negative capacitance (NC) without the requirement of Landau-Khalatnikov (L-K) theory.

AB - In this work, we present an analysis of the switching dynamics of ferroelectrics that provides a critical insight into the steep slope exhibited by Ferroelectric Field Effect Transistor (FeFET). We show that, steep slope is fundamentally related to two competing mechanisms-the polarization switching dynamics in the ferroelectric and the time delay of the compensating free-charge. Our analysis sheds light on a possible mechanism of the phenomenon of transient negative capacitance (NC) without the requirement of Landau-Khalatnikov (L-K) theory.

KW - FeFET and NC-FET

KW - Steep Slope

UR - https://www.scopus.com/pages/publications/85067817743

U2 - 10.1109/EDTM.2019.8731115

DO - 10.1109/EDTM.2019.8731115

M3 - Conference contribution

AN - SCOPUS:85067817743

T3 - 2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019

SP - 59

EP - 61

BT - 2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019

Y2 - 12 March 2019 through 15 March 2019

ER -

Steep Slope Ferroelectric Field Effect Transistor

Abstract

Publication series

Conference

Bibliographical note

Keywords

Access to Document

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