Silicon Quantum Dot in a Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET) Structure

Maroun Khoury, Allen Gunther, David P., Jr. Pivin, Mary Rack, David Ferry

Research output: Contribution to journalArticlepeer-review

12 Scopus citations

Abstract

We have fabricated a 200 nm quantum dot in a silicon Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET) structure. Confining gates situated on top of a 10 nm oxide deplete the electron gas created by an inversion gate 70 nm away from the Si-SiO2 interface. Measurements indicate that the size of the dot can be tuned by the gates. Furthermore, we observe conductance fluctuations in the gate characteristic which are indicative of single-electron behavior.
Original languageEnglish
Pages (from-to)469
JournalJapanese Journal of Applied Physics
Volume38
Issue number1B
DOIs
StatePublished - 1999

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