Abstract
We have fabricated a 200 nm quantum dot in a silicon Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET) structure. Confining gates situated on top of a 10 nm oxide deplete the electron gas created by an inversion gate 70 nm away from the Si-SiO2 interface. Measurements indicate that the size of the dot can be tuned by the gates. Furthermore, we observe conductance fluctuations in the gate characteristic which are indicative of single-electron behavior.
Original language | English |
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Pages (from-to) | 469 |
Journal | Japanese Journal of Applied Physics |
Volume | 38 |
Issue number | 1B |
DOIs | |
State | Published - 1999 |