Resistive Switching Behavior seen from the Energy Point of View

Jorge Gomez, Angel Abusleme, Ioannis Vourkas, Antonio Rubio

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

2 Scopus citations

Abstract

The technology of Resistive Switching (RS) devices (memristors) is continuously maturing on its way towards viable commercial establishment. So far, the change of resistance has been identified as a function of the applied pulse characteristics, such as amplitude and duration. However, parameter variability holds back any universal approach based on these two magnitudes, making also difficult even the qualitative comparison between different RS material compounds. On the contrary, there is a relevant magnitude which is much less affected by device variability; the energy. In this direction, we doubt anyone so far has ever wondered 'what is the quantitative effect of the injected energy on the device state?' Interestingly, a first step was made recently towards the definition of performance parameters for this emerging device technology, using as fundamental parameter the energy. In this work, we further elaborate on such ideas, proving experimentally that the 'resistance change per energy unit' (dR/dE) can be considered a significant magnitude in analog operation of bipolar memristors, being a key performance parameter worth of timely disclosure.

Original languageEnglish
Title of host publication2018 IEEE 24th International Symposium on On-Line Testing and Robust System Design, IOLTS 2018
EditorsMihalis Maniatakos, Dan Alexandrescu, Dimitris Gizopoulos, Panagiota Papavramidou
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages147-150
Number of pages4
ISBN (Electronic)9781538659922
DOIs
StatePublished - 26 Sep 2018
Externally publishedYes
Event24th IEEE International Symposium on On-Line Testing and Robust System Design, IOLTS 2018 - Platja D'Aro, Spain
Duration: 2 Jul 20184 Jul 2018

Publication series

Name2018 IEEE 24th International Symposium on On-Line Testing and Robust System Design, IOLTS 2018

Conference

Conference24th IEEE International Symposium on On-Line Testing and Robust System Design, IOLTS 2018
Country/TerritorySpain
CityPlatja D'Aro
Period2/07/184/07/18

Bibliographical note

Publisher Copyright:
© 2018 IEEE.

Keywords

  • device characterization
  • memristor
  • ReRAM
  • resistive switching
  • transimpedance amplifier
  • voltage ramp speed

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