TY - JOUR
T1 - Nanoscale Lithography with Electron Exposure of SiO 2 Resists
AU - Whidden, Thomas
AU - Allgair, John
AU - Jenkins-Gray, Angela
AU - Khoury, Maroun
AU - Kozicki, Michael
AU - Ferry, David
PY - 1995/8/1
Y1 - 1995/8/1
N2 - We report on electron-beam patterned hydrocarbon residues on silicon dioxide as chemical initiators in high temperature HF vapor etching for the production of nanolithographic masks (∼20 nm feature size). These are of utility in reactive ion etching based pattern transfer to the underlying substrate and, potentially, as dielectric components in nanoscale devices. Metallic cobalt, deposited through the oxide mask, has been used to generate 12 20 nm wide lines of cobalt silicide.
AB - We report on electron-beam patterned hydrocarbon residues on silicon dioxide as chemical initiators in high temperature HF vapor etching for the production of nanolithographic masks (∼20 nm feature size). These are of utility in reactive ion etching based pattern transfer to the underlying substrate and, potentially, as dielectric components in nanoscale devices. Metallic cobalt, deposited through the oxide mask, has been used to generate 12 20 nm wide lines of cobalt silicide.
U2 - 10.1143/JJAP.34.4420
DO - 10.1143/JJAP.34.4420
M3 - Article
SN - 0021-4922
VL - 34
SP - 4420
JO - Japanese Journal of Applied Physics
JF - Japanese Journal of Applied Physics
IS - 8B
ER -