Hysteresis-free negative capacitance in the multi-domain scenario for logic applications

J. Gomez, S. Dutta, K. Ni, J. A. Smith, B. Grisafe, A. Khan, S. Datta

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

14 Scopus citations


Ferroelectrics (FEs) are known to decompose into multidomain structures when combined with dielectric (DE) layers. According to current understanding, it is thought that under such conditions, ferroelectric negative capacitance (NC) cannot be stabilized, and the operation of the device would be hysteretic. Here, we report, for the first time, that with a tight control of non-uniformity of the dielectric such that the capacitance matching conditions are nominally achieved, a hysteresis-free negative capacitance can be achieved in a multi-domain FE-DE structure. We capture the inhomogeneous switching in the FE layer by a novel circuit centric modeling framework that incorporates a distribution of domains with different ferroelectric and dielectric parameters. We observe that, in a FE-DE system with no intermediate, metallic layer, as high as ~95% of the ferroelectric domains in can be stabilized in the NC state which allows for the hysteresis free operation. We further show that when an intermediate metallic layer is introduced, the system does not exhibit stabilized NC behavior under any situation. The results could pave the way for understanding the design framework of robust, steep negative capacitance FETs (NCFETs) with multi-domain ferroelectrics.

Original languageEnglish
Title of host publication2019 IEEE International Electron Devices Meeting, IEDM 2019
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781728140315
StatePublished - Dec 2019
Externally publishedYes
Event65th Annual IEEE International Electron Devices Meeting, IEDM 2019 - San Francisco, United States
Duration: 7 Dec 201911 Dec 2019

Publication series

NameTechnical Digest - International Electron Devices Meeting, IEDM
ISSN (Print)0163-1918


Conference65th Annual IEEE International Electron Devices Meeting, IEDM 2019
Country/TerritoryUnited States
CitySan Francisco

Bibliographical note

Publisher Copyright:
© 2019 IEEE.


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