Higher-k Zirconium Doped Hafnium Oxide (HZO) Trigate Transistors with Higher DC and RF Performance and Improved Reliability

W. Chakraborty*, M. S. Jose, J. Gomez, A. Saha, K. A. Aabrar, P. Fay, S. Gupta, S. Datta

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

5 Scopus citations

Abstract

Equivalent oxide thickness (EOT) of gate stack has not scaled over past several technology nodes. For 3nm and beyond logic nodes it is imperative to resume EOT scaling to meet the high performance, low-gate leakage (IGate) and improved reliability requirements of advanced CMOS. In this work, we demonstrate a novel strategy to reduce the EOT of high-K HfO2 gate-stacks, by enhancing the dielectric constant (κ) through optimum Zirconium (Zr) doping Hf: Zr ratio of 3:7. Through comprehensive theoretical modeling and experimental characterization, we show: 1) Higher-κ response in scaled Zr-doped (70%) HfO2 (HZO) gate-stack, due to strong inter-domain electrostatic interactions; 2) a 22% EOT reduction in HZO FET over control HfO2 without any mobility degradation, resulting in 20% and 18% boost in drive-current (ID,SAT) and transconductance (gm) respectively; 3) improved device reliability such as positive bias temperature instability (PBTI) resulting in ~60mV higher VMAX gain and 4) consistent enhancement in gm arising from thinner EOT that persists in the gigahertz frequency domain.

Original languageEnglish
Title of host publication2021 Symposium on VLSI Technology, VLSI Technology 2021
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9784863487802
StatePublished - 2021
Externally publishedYes
Event41st Symposium on VLSI Technology, VLSI Technology 2021 - Virtual, Online, Japan
Duration: 13 Jun 202119 Jun 2021

Publication series

NameDigest of Technical Papers - Symposium on VLSI Technology
Volume2021-June
ISSN (Print)0743-1562

Conference

Conference41st Symposium on VLSI Technology, VLSI Technology 2021
Country/TerritoryJapan
CityVirtual, Online
Period13/06/2119/06/21

Bibliographical note

Publisher Copyright:
© 2021 JSAP

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