Exploring Memristor Multi-Level Tuning Dependencies on the Applied Pulse Properties via a Low Cost Instrumentation Setup

Jorge Gomez, Ioannis Vourkas*, Angel Abusleme

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

26 Scopus citations

Abstract

Deeper understanding of memristive behavior is the only safe way towards maximum exploitation of the favorable properties and the analog nature of this new device technology in innovative applications. This can be achieved through experimental hands-on experience with real devices. However, lab experiments with memristors are a challenging step, especially for the uninitiated. In this direction, this paper presents some important considerations to carry out reliable measurements using an experimental setup composed of off-the-shelf components and an affordable data acquisition system. We specifically show how a transimpedance amplifier can be used to protect the memristor from damage via current compliance limiting, and allow full control over the voltage drop on its terminals. Using the proposed setup, a set of key experiments were carried out on commercial memristors from Knowm Inc., revealing fundamental dependencies of memristor state-tuning properties on the characteristics of the applied pulses and the initial conditions of the devices.

Original languageEnglish
Article number8708254
Pages (from-to)59413-59421
Number of pages9
JournalIEEE Access
Volume7
DOIs
StatePublished - 2019
Externally publishedYes

Bibliographical note

Publisher Copyright:
© 2013 IEEE.

Keywords

  • Digilent AD2
  • feedback ammeter
  • instrumentation
  • Knowm
  • memristor
  • multi-level memory
  • ReRAM
  • resistive switching
  • transimpedance amplifier

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