Experimental Demonstration of Ferroelectric Spiking Neurons for Unsupervised Clustering

Zheng Wang, Brian Crafton, Jorge Gomez, Ruijuan Xu, Aileen Luo, Zoran Krivokapic, Lane Martin, Suman Datta, Arijit Raychowdhury, Asif Islam Khan

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

61 Scopus citations


We report the first experimental demonstration of ferroelectric field-effect transistor (FEFET) based spiking neurons. A unique feature of the ferroelectric (FE) neuron demonstrated herein is the availability of both excitatory and inhibitory input connections in the compact 1T-1FEFET structure, which is also reported for the first time for any neuron implementations. Such dual neuron functionality is a key requirement for bio-mimetic neural networks and represents a breakthrough for implementation of the third generation spiking neural networks (SNNs) - also reported herein for unsupervised learning and clustering on real world data for the first time. The key to our demonstration is the careful design of two important device level features: (1) abrupt hysteretic transitions of the FEFET with no stable states therein, and (2) the dynamic tunability of the FEFET hysteresis by bias conditions which allows for the inhibition functionality. Experimentally calibrated, multi-domain Preisach based FEFET models were used to accurately simulate the FE neurons and project their performance at scaled nodes. We also implement an SNN for unsupervised clustering and benchmark the network performance across analog CMOS and emerging technologies and observe (1) unification of excitatory and inhibitory neural connections, (2) STDP based learning, (3) lowest reported power (3.6nW) during classification, and (4) a classification accuracy of 93%.

Original languageEnglish
Title of host publication2018 IEEE International Electron Devices Meeting, IEDM 2018
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781728119878
StatePublished - 2 Jul 2018
Externally publishedYes
Event64th Annual IEEE International Electron Devices Meeting, IEDM 2018 - San Francisco, United States
Duration: 1 Dec 20185 Dec 2018

Publication series

NameTechnical Digest - International Electron Devices Meeting, IEDM
ISSN (Print)0163-1918


Conference64th Annual IEEE International Electron Devices Meeting, IEDM 2018
Country/TerritoryUnited States
CitySan Francisco

Bibliographical note

Publisher Copyright:
© 2018 IEEE.


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