Cryogenic RF CMOS on 22nm FDSOI Platform with Record fT=495GHz and fMAX=497GHz

W. Chakraborty*, K. A. Aabrar, J. Gomez, R. Saligram, A. Raychowdhury, P. Fay, S. Datta

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

7 Scopus citations

Abstract

Cryogenic DRAM at 77K is a promising high bandwidth memory option to complement cryogenic superconducting (SC) processors at 4K [1]. CMOS mixed-signal interface circuits with ultra-high gain-bandwidth product (~THz) is needed to bridge the three-order-of-magnitude voltage gap between SC logic (~25mV) and cryo-DRAM (~0.8-1V). In this work, we demonstrate high-frequency operation of 18nm gate length (LG) FDSOI NMOS and PMOS from 300K to 5.5K operating temperature (T). We show record unity current-gain cutoff frequency (fT) of 495/337 GHz (35%/25% gain over 300K) and maximum oscillation frequency (fMAX) of 497/372 GHz (30%/30% gain) for NMOS/PMOS at 5.5 K. A small-signal equivalent circuit model is developed to identify the T-dependent and T-invariant components of the extrinsic and intrinsic FET. Cryo-RF CMOS on 22 nm FDSOI platform enables access to Terahertz analog regime, while providing Giga-scale digital density at the same time.

Original languageEnglish
Title of host publication2021 Symposium on VLSI Technology, VLSI Technology 2021
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9784863487802
StatePublished - 2021
Externally publishedYes
Event41st Symposium on VLSI Technology, VLSI Technology 2021 - Virtual, Online, Japan
Duration: 13 Jun 202119 Jun 2021

Publication series

NameDigest of Technical Papers - Symposium on VLSI Technology
Volume2021-June
ISSN (Print)0743-1562

Conference

Conference41st Symposium on VLSI Technology, VLSI Technology 2021
Country/TerritoryJapan
CityVirtual, Online
Period13/06/2119/06/21

Bibliographical note

Publisher Copyright:
© 2021 JSAP

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