Computational Associative Memory Based on Monolithically Integrated Metal-Oxide Thin Film Transistors for Update-Frequent Search Applications

Zijian Zhao, Jorge Gomez, Huacheng Ye, Mohsen Imani, Xunzhao Yin, Shan Deng, Bryan Melanson, Jing Zhang, Xiao Gong, Angel Abusleme, Suman Datta, Kai Ni*

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

4 Scopus citations

Abstract

Associative memory based on ternary content addressable memory (TCAM) is typically used in a static inference mode where the update is occasional. However, for update-frequent associative search applications (e.g., clustering), existing TCAM designs have a fundamental gap between low-density, high write performance SRAM, and high-density, poor write performance nonvolatile memories. In this work, we demonstrate: i) monolithic 3D TCAM designs based on thin film transistors (TFT) that can simultaneously achieve high density and excellent write performance, thus bridging the performance gap among existing TCAM designs for update-frequent search applications; ii) the necessity of 6T TFT TCAM design to restore the desired independence among the TCAM words, which is destroyed in the 4T TFT TCAM design; iii) excellent write performance with logic-compatible write voltage (<1.5V), <20ns write latency, >1010 endurance; iv) up to 14x/35x improvement in speed/energy over GPU in executing the K-Means clustering algorithm, showing great promise of the TFT TCAM.

Original languageEnglish
Title of host publication2021 IEEE International Electron Devices Meeting, IEDM 2021
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages37.6.1-37.6.4
ISBN (Electronic)9781665425728
DOIs
StatePublished - 2021
Externally publishedYes
Event2021 IEEE International Electron Devices Meeting, IEDM 2021 - San Francisco, United States
Duration: 11 Dec 202116 Dec 2021

Publication series

NameTechnical Digest - International Electron Devices Meeting, IEDM
Volume2021-December
ISSN (Print)0163-1918

Conference

Conference2021 IEEE International Electron Devices Meeting, IEDM 2021
Country/TerritoryUnited States
CitySan Francisco
Period11/12/2116/12/21

Bibliographical note

Publisher Copyright:
© 2021 IEEE.

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