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Characterization and Modeling of 22 nm FDSOI Cryogenic RF CMOS
Wriddhi Chakraborty
*
, Khandker Akif Aabrar
,
Jorge Gomez
, Rakshith Saligram
, Arijit Raychowdhury
, Patrick Fay
, Suman Datta
*
Corresponding author for this work
Research output
:
Contribution to journal
›
Article
›
peer-review
35
Scopus citations
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Keyphrases
FDSOI
100%
RF CMOS
100%
NMOS
66%
PMOS
66%
Temperature Effect
33%
RF Performance
33%
Transistor
33%
Mixed-signal
33%
Small-signal Model
33%
Fmax
33%
Gigas
33%
Maximum Oscillation Frequency
33%
Cryo
33%
Gain-bandwidth Product
33%
Operating Temperature
33%
Current Gain Cutoff Frequency
33%
Gate Length
33%
Interface Circuit
33%
Invariant Component
33%
Ultra High Gain
33%
CMOS Circuits
33%
Cryogenic CMOS (Cryo-CMOS)
33%
Design Space Exploration
33%
RF Circuits
33%
Single-flux-quantum Logic
33%
Quantum Processor
33%
Decoherence Time
33%
Qubit
33%
Dynamic Random Access Memory
33%
Integration Density
33%
Analog Performance
33%
Memory Circuits
33%
Performance Benchmarking
33%
Cryogenic Temperature
33%
Temperature Invariant
33%
Physics
Quantum Dot
100%
Cryogenic Temperature
100%
Space Exploration
100%
Quantum Logic
100%
Operating Temperature
100%
Engineering
Silicon on Insulator
100%
Cutoff Frequency
33%
Field Effect Transistor
33%
Current Gain
33%
Interface Circuit
33%
Operating Temperature
33%
Gain-Bandwidth Product
33%
Gate Length
33%
Dynamic Random Access Memory
33%
Qubit
33%
Design Space
33%
Cryogenic Temperature
33%
Material Science
Silicon
100%
Electronic Circuit
100%
Density
25%
Field Effect Transistor
25%
Transistor
25%